In the following figure,the diodes which are forward biased,are

In an unbiased $n-p$ junction,electrons diffuse from $n-$ region to $p-$ region because

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

Two ammeters $A_1$ and $A_2$ are connected as shown in the given figure. By neglecting the internal resistance of the ammeters, the reading in the meter $A_1$ is (in $\text{A}$)

In an unbiased $P-N$ junction,holes diffuse from the $p-$ region to $n-$ region because

The built-in potential of a $p-n$ junction diode is $0.7 \,V$. If the diode is forward biased and the applied voltage is $0.3 \,V$, the effective barrier height is (in $\,V$)